Physics Based Fatigue Compact Model for Ferroelectric Capacitors
نویسندگان
چکیده
A physics based compact model describing the fatigue behavior of ferroelectric capacitors has been developed. Fatigue is a gradual decrease of detectable polarization with increasing number of polarization cycles. This can be caused by trapped charges which pin dipoles near the interface to the electrode. In order to polarize those pinned dipoles they have to be separated from the trapped charges by a higher electrical force. This force has been described in our model by additional coercive voltages representing the different polarization response of the dipoles in the interface region in contrast to those in the inner region of the ferroelectric capacitor. Our model has been implemented into a common-used circuit simulator showing good agreement with measurements.
منابع مشابه
Polarization fatigue of organic ferroelectric capacitors
The polarization of the ferroelectric polymer P(VDF-TrFE) decreases upon prolonged cycling. Understanding of this fatigue behavior is of great technological importance for the implementation of P(VDF-TrFE) in random-access memories. However, the origin of fatigue is still ambiguous. Here we investigate fatigue in thin-film capacitors by systematically varying the frequency and amplitude of the ...
متن کاملOn the persistence of polar domains in ultrathin ferroelectric capacitors.
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferr...
متن کاملThree-dimensional high-resolution reconstruction of polarization in ferroelectric capacitors by piezoresponse force microscopy
A combination of vertical and lateral piezoresponse force microscopy ~VPFM and LPFM, respectively! has been used to map the out-of-plane and in-plane polarization distribution, respectively, of ~111!-oriented Pb(Zr,Ti)O3-based ~PZT! ferroelectric patterned and reactively-ion-etched capacitors. While VPFM and LPFM have previously been used to determine the orientation of the polarization vector ...
متن کاملFatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.
Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the f...
متن کاملGraded ferroelectric capacitors with robust temperature characteristics
Ferroelectric thin films offer the possibility of engineering the dielectric response for tunable components in frequency-agile rf and microwave devices. However, this approach often leads to an undesired temperature sensitivity. Compositionally graded ferroelectric films have been explored as a means of redressing this sensitivity, but experimental observations vary depending on geometry and o...
متن کامل